| 摘要 |
After an interlayer insulating film and a lower side layer of a conductive film for a bottom electrode and the like are formed above a substrate, a Pt film of a thickness of 50 nm to 500 nm, for example, about 175 nm is formed on the lower side layer as an upper side layer of a conductive film for a bottom electrode by a DC magnetron sputtering method. As the lower side layer, for example, a Ti film is formed. A substrate temperature at a time of forming the upper side layer is set at 250° C. to 450° C., for example, at 350° C. By forming the upper side layer in such a substrate temperature, the upper side layer intense in orientation in a [222] direction is obtained. Therefore, orientation of a ferroelectric film which is formed directly thereon to a [111] direction also becomes extremely favorable.
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