| 摘要 |
A method for detecting micro-defects of a semiconductor device is provided to smoothly detect the abnormality of a contact hole by improving a second electron yield during the e-beam inspection for the semiconductor device including a metal electrode. A method for detecting micro-defects of a semiconductor device includes the steps of: depositing polysilicon on a semiconductor substrate having a capacitor composed of electrodes including metal material; removing the polysilicon on the surface of the semiconductor substrate with leaving the polysilicon on a contact hole in a cell area; annealing the semiconductor substrate; and inspecting the semiconductor substrate by using an e-beam device.
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