发明名称 |
PRODUCTION METHOD FOR COMPOUND SEMICONDUCTOR SINGLE CRYSTAL |
摘要 |
A method for producing a compound semiconductor single crystal by a liquid encapsulated Czochralski method, including containing a semiconductor raw material and an encapsulating material in a raw material melt-containing portion having a first crucible having a bottom and a cylindrical shape and a second crucible disposed within the first crucible and having a communication hole communicating with the first crucible in a bottom portion thereof; melting the raw material by heating the raw material melt-containing portion; and growing a crystal by making a seed crystal contact with a surface of the raw material melt in a state covered with the encapsulating material and by pulling up the seed crystal. A heater temperature is controlled so that a diameter of a growing crystal becomes approximately equal to an inner diameter of the second crucible, and the crystal is grown by maintaining a surface of the growing crystal in a state covered with the encapsulating material until termination of crystal growth. <IMAGE> |
申请公布号 |
EP1500633(A4) |
申请公布日期 |
2007.10.24 |
申请号 |
EP20020786108 |
申请日期 |
2002.12.17 |
申请人 |
NIPPON MINING & METALS CO., LTD. |
发明人 |
ASAHI, TOSHIAKI;SATO, KENJI;ARAKAWA, ATSUTOSHI |
分类号 |
C30B15/00;C30B15/12;C30B27/02;C30B29/48 |
主分类号 |
C30B15/00 |
代理机构 |
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主权项 |
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地址 |
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