发明名称 |
Methods of forming semiconductor devices including mesa structures and multiple passivation layers and related devices |
摘要 |
<p>A method of forming a semiconductor device may include forming a semiconductor structure (14) on a substrate (12) wherein the semiconductor structure (14) defines a mesa (20) having a mesa surface (20A) opposite the substrate (12) and mesa sidewalls between the mesa surface and the substrate. A first passivation layer (30) can be formed on at least portions of the mesa sidewalls and on the substrate (12) adjacent the mesa sidewalls wherein at least a portion of the mesa surface (20A) is free of the first passivation layer (30) and wherein the first passivation layer (30) comprises a first material. A second passivation layer (40) can be formed on the first passivation layer (30) wherein at least a portion of the mesa surface (20A) is free of the second passivation layer (40), and wherein the second passivation layer (40) comprises a second material different than the first material. Related devices are also discussed.
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申请公布号 |
EP1830416(A3) |
申请公布日期 |
2007.10.24 |
申请号 |
EP20060124077 |
申请日期 |
2003.12.18 |
申请人 |
CREE INC. |
发明人 |
HABERERN, KEVIN W;ROSADO, RAYMOND;BERGMANN, MICHAEL J;EMERSON, DAVID T |
分类号 |
H01S5/028;C30B1/00;H01L21/00;H01L33/14;H01S5/042;H01S5/22;H01S5/223;H01S5/227;H01S5/323 |
主分类号 |
H01S5/028 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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