| 摘要 |
A GaN semiconductor device is provided to increase a reverse breakdown voltage and to reduce leakage current by simultaneously designing a floating metal ring and a field plate. An epi-wafer(110) includes at least GaN-based semiconductor layer. A source electrode(120) and a drain electrode(130) are disposed apart from each other on the epi-wafer. A gate electrode(140) is arranged on the epi-wafer between the source electrode and the drain electrode. At least, one conductive floating metal ring(150) is positioned on the epi-wafer between the gate electrode and the drain electrode. A bias is not applied to the conductive floating metal ring. An insulating passivation layer(160) is formed to expose partially the gate electrode, the source electrode, and the drain electrode. A conductive field plate(170) is disposed on the passivation layer in order to be connected to the exposed gate electrode. The conductive field plate is formed to diffuse electric field concentrated on the gate electrode in an inverse bias state.
|
