发明名称 |
cmos transistor junction region formed by a cvd etching and deposition sequence |
摘要 |
This invention adds to the art of replacement source-drain cMOS transistors. Processes may involve etching a recess in the substrate material using one equipment set, then performing deposition in another. Disclosed is a method to perform the etch and subsequent deposition in the same reactor without atmospheric exposure. In-situ etching of the source-drain recess for replacement source-drain applications provides several advantages over state of the art ex-situ etching. Transistor drive current is improved by: (1) Eliminating contamination of the silicon-epilayer interface when the as-etched surface is exposed to atmosphere and (2) Precise control over the shape of the etch recess. Deposition may be done by a variety of techniques including selective and non-selective methods. In the case of blanket deposition, a measure to avoid amorphous deposition in performance critical regions is also presented. |
申请公布号 |
GB2437461(A) |
申请公布日期 |
2007.10.24 |
申请号 |
GB20070014625 |
申请日期 |
2006.01.04 |
申请人 |
INTEL CORPORATION |
发明人 |
ANAND MURTHY;GLENN GLASS;ANDREW WESTMEYER;MICHAEL HATTENDORF;JEFFERY WANK |
分类号 |
H01L21/336;H01L21/205;H01L21/8238 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|