| 摘要 |
A method for determining a resistive state of a resistive memory cell, a memory circuit and a circuit for determining the resistive state of the resistive memory cell are provided to determine the resistive state of the memory cell by comparing a reference current with a current depending on the resistive state of the memory cell. A memory circuit includes a resistive memory cell(105) and at least one reference resistive memory cell(110,115). A read circuit(145) has a first input connected to the resistive memory cell and a second input connected to the reference resistive memory cell. The read circuit further includes an output part delivering an output signal according to the relation between a reference current from the reference resistive memory cell and the resistive state of the memory cell.
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