发明名称 Transitioning the state of phase change material by annealing
摘要 A semiconductor device includes a preprocessed wafer and an annealed phase change material layer contacting the preprocessed wafer. The semiconductor device includes a first material layer contacting the annealed phase change material layer.
申请公布号 EP1848047(A2) 申请公布日期 2007.10.24
申请号 EP20070007521 申请日期 2007.04.12
申请人 QIMONDA AG;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ROSSNAGEL, STEPHEN M.;PHILIPP, JAN BORIS
分类号 H01L45/00 主分类号 H01L45/00
代理机构 代理人
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