| 摘要 |
In the fabrication of a transistor device, particularly a low-voltage high-frequency transistor for use in mobile telecommunications, a method for improving the transistor performance and the high-frequency characteristics of the device is described. The method includes providing a semiconductor substrate (1) with an n-doped collector layer (5) surrounded by isolation areas (4), implanting antimony ions into the collector layer such that a thin highly n-doped layer (18) is formed in the uppermost portion of the collector layer, and forming a base on top of said thin highly n-doped layer (18). |
