VERTICALLY STRUCTURED FIELD EMISSION DISPLAY AND METHOD OF MANUFACTURING THE SAME

摘要

A vertically structured field emission device and a method for manufacturing the same are provided to minimize a gap between electrodes and to secure a plurality of gate electrode insertion spaces by designing freely a size and a shape of an emitter. A buffer layer(110) is formed on a substrate(100). An anode electrode(125) is formed on a predetermined region of the buffer layer and is formed with a nitride-based semiconductor. A cathode electrode(122) is formed with the nitride-based semiconductor and is formed on a residual region of the buffer layer except for the anode electrode of the buffer layer. An emitter(123) is extended from the cathode electrode and is protruded toward the anode electrode. One or more gate electrodes are formed on the buffer layer and are disposed between the cathode electrode and the anode electrode.