MONOLITHIC INTEGRATED CIRCUIT HAVING THREE FIELD EFFECT TRANSISTORS,申请号EP20060719018-传众专利搜索

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发明名称	MONOLITHIC INTEGRATED CIRCUIT HAVING THREE FIELD EFFECT TRANSISTORS
摘要
申请公布号	EP1846951(A1)	申请公布日期	2007.10.24
申请号	EP20060719018	申请日期	2006.01.20
申请人	RAYTHEON COMPANY	发明人	HWANG, KIUCHUL;ADLERSTEIN, MICHAEL, G.
分类号	H01L27/06;H01L27/088;H01L27/095	主分类号	H01L27/06
代理机构		代理人
主权项
地址

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