| 摘要 |
A well bias circuit of a memory device and a method of operating the same are provided to prevent the damage of the circuit by setting a well bias as 0V after discharging a high voltage applied to the well during a power-on period of the memory. A well voltage supply part(100) applies a high voltage to a well for erasing data of a memory cell. A well discharge part(300) discharges the high voltage applied to the well by a first control signal after data erase of the memory cell is completed. A well-to-ground circuit part(200) maintains the well bias ground by a second control signal, in case except the data erase of the memory cell. A control block(400) enables the well discharge part for a constant time during power-on.
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