| 摘要 |
A method for fabricating a semiconductor device is provided to improve a process efficiency by performing a PAI(Pre-Amorphourization Implantation) process and a cleaning process in a single chamber. A first plasma gas containing germanium ion is fed into a process chamber(200), in which a semiconductor substrate is disposed, thereby amorphourizing the semiconductor substrate. After an inert gas is fed into the process chamber to purge the process chamber, a second plasma containing hydrogen ion is fed into the process chamber. The second plasma gas is accelerated by energy of 100 to 1000 eV to remove particles from the semiconductor substrate.
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