发明名称 Indium-tin oxide (ITO) film and process for its production
摘要 A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance of preferably less than 200 muOmegacm and a small surface roughness of preferably less than 1 nm on a substrate, wherein combined BF/DC sputtering of an indium-tin oxide (ITO) target is employed and wherein the process gas is supplemented by an argon/hydrogen mixture as reaction gas during the sputtering, as well as ITO-films with the above-named characteristics.
申请公布号 US7285342(B2) 申请公布日期 2007.10.23
申请号 US20040986597 申请日期 2004.11.11
申请人 UNAXIS DEUTSCHLAND GMBH 发明人 KLOEPPEL ANDREAS;TRUBE JUTTA
分类号 B32B9/00;H01L51/50;C23C14/08;C23C14/34;H01B5/14;H01B13/00;H01L31/0224;H01L31/18;H05B33/28 主分类号 B32B9/00
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