发明名称 |
Indium-tin oxide (ITO) film and process for its production |
摘要 |
A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance of preferably less than 200 muOmegacm and a small surface roughness of preferably less than 1 nm on a substrate, wherein combined BF/DC sputtering of an indium-tin oxide (ITO) target is employed and wherein the process gas is supplemented by an argon/hydrogen mixture as reaction gas during the sputtering, as well as ITO-films with the above-named characteristics. |
申请公布号 |
US7285342(B2) |
申请公布日期 |
2007.10.23 |
申请号 |
US20040986597 |
申请日期 |
2004.11.11 |
申请人 |
UNAXIS DEUTSCHLAND GMBH |
发明人 |
KLOEPPEL ANDREAS;TRUBE JUTTA |
分类号 |
B32B9/00;H01L51/50;C23C14/08;C23C14/34;H01B5/14;H01B13/00;H01L31/0224;H01L31/18;H05B33/28 |
主分类号 |
B32B9/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|