发明名称 |
System and method for hardening MRAM bits |
摘要 |
A device is connected in parallel with an MTJ structure of an MRAM bit to shunt photocurrent away from and/or limit voltage across the MTJ structure during a dose rate event. The device may include at least one transistor and/or at least one diode. One device may be used to protect an entire row and/or column of MRAM bits. As a result, the MRAM bits are protected during a dose rate event.
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申请公布号 |
US7286393(B2) |
申请公布日期 |
2007.10.23 |
申请号 |
US20050096179 |
申请日期 |
2005.03.31 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
HYNES OWEN J.;KATTI ROMNEY;LIU HARRY H. L.;LIU MICHAEL S. |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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