FABRICATION METHOD OF ZNO THIN FILM AND ZNO TRANSISTOR, AND THIN FILM TRANSISTOR ADOPTING THE SAME

摘要

A fabrication method of a ZnO semiconductor thin film and a thin film transistor using the fabrication method are provided to enlarge a margin of the thin film transistor and the ZnO semiconductor thin film. A fabrication method of a ZnO semiconductor thin film includes the steps of: depositing a pure ZnO target without dopants in an oxygen atmosphere on a substrate(a); forming a diffusion layer made of oxygen-friendly metal on the entire surface or some part of the ZnO thin film(b); and diffusing oxygen included in the ZnO thin film by performing annealing for lowering oxygen concentration of the ZnO thin film and giving a characteristic of a semiconductor to the ZnO thin film(c). An oxidation of a diffusing layer is controlled by the temperature and time of the annealing.