发明名称 |
Method of forming a magnetic tunnel junction |
摘要 |
A method of forming a magnetic tunnel junction memory element and the resulting structure are disclosed. A magnetic tunnel junction memory element comprising a thick nonmagnetic layer between two ferromagnetic layers. The thick nonmagnetic layer has an opening in which a thinner tunnel barrier layer is disposed. The resistance of a magnetic tunnel junction memory element may be controlled by adjusting the surface area and/or thickness of the tunnel barrier layer without regard to the surface area of the ferromagnetic layers.
|
申请公布号 |
US7284315(B2) |
申请公布日期 |
2007.10.23 |
申请号 |
US20040759078 |
申请日期 |
2004.01.20 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
TUTTLE MARK E. |
分类号 |
G11B5/187;B05D5/12;G11C11/16;H01F10/32;H01F41/30;H01L27/22;H01L43/08;H01L43/12 |
主分类号 |
G11B5/187 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|