Dual port memory cell with reduced coupling capacitance and small cell size

摘要

A dual or multi port memory device including a first group of bit lines associated with the first port a second group of bit lines associated with the second port, wherein the bit lines are arranged in different metalization layers and separated horizontally to reduce one or both of stray and coupling capacitance associated with the bit lines. In one exemplary embodiment, the bit lines from each port that are in closer proximity to the bit lines of the other (or another) port are disposed in different metallization layers to reduce coupling capacitance therebetween. One or more further embodiments can include V_SS or V_DD line(s) located horizontally between the bit lines and metal to substrate contacts for the bit lines can be formed in opposite corners of the memory device to further reduce capacitance.