Row decoder circuit for use in non-volatile memory device

摘要

The invention disclosed herein is a non-volatile memory device. The non-volatile memory device comprises: a first transistor connected between a first voltage and a control node, and controlled by a second voltage; a second transistor connected between the first voltage and the control node, and controlled by a third voltage, and a word line driver for driving a word line in responsive to a voltage of the control node. The second voltage is set to a ground voltage during an erase operation. The third voltage is set to a power voltage during the erase operation.