发明名称 Designing method and device for phase shift mask
摘要 A planar pattern ( 11 ), having a plurality of apertures of the same size (WxxWy), is determined by a two-dimensional layout determination tool ( 10 ), and a three-dimensional structure, having a depth d and an undercut amount Uc for making the phase of the transmitted light be shifted by 180 degrees with every even-numbered aperture, is determined by a three-dimensional structure determination tool ( 20 ). Simulation of transmitted light is executed for a structural body having the planar pattern ( 11 ) and the three-dimensional structure ( 21 ) by a three-dimensional simulator ( 30 ) to determine the light intensity deviation D of transmitted light for an odd-numbered aperture without a trench and an even-numbered aperture with a trench. At a two-dimensional simulator ( 40 ), simulations using a two-dimensional model prepared based on this deviation D are performed to determine a correction amount delta for making the deviation D zero and obtain a new planar pattern ( 12 ). The work load spent on designing a trench-type, Levenson-type phase shift mask can be lightened and the working time for the designing process can be shortened.
申请公布号 US7287240(B2) 申请公布日期 2007.10.23
申请号 US20040497743 申请日期 2004.06.04
申请人 DAI NIPPON PRINTING CO., LTD. 发明人 TOYAMA NOBUHITO;MORIKAWA YASUTAKA;MESUDA KEI
分类号 G06F7/50;G03F1/30;G03F1/36;G03F1/68;G06F17/50;G06F19/00;G21K5/00 主分类号 G06F7/50
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