| 摘要 |
Disclosed is a semiconductor device comprises a semiconductor substrate having on its surface a trench, a polycrystalline semiconductor film formed inside the trench, a diffusion layer deposited on a surface region of the semiconductor substrate, and a metal semi-conductor nitride layer interposed between the diffusion layer and the polycrystalline semiconductor film, the metal semiconductor nitride layer including a metal, nitrogen and a semiconductor constituting the semiconductor substrate, and electrically connecting the polycrystalline semiconductor film with the diffusion layer.
|
