A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor integrated circuit device and a method of manufacturing the same are provided to improve electro- migration property of wiring by optimizing a wiring and a contacting part of the wiring. A semiconductor integrated circuit device includes the steps of: forming a first insulation film on a semiconductor substrate; forming a first wiring on the first insulation film; forming a second insulation film on the first wiring; forming a third insulation film on the second insulation film; forming a hole extending to the first wiring by etching the second insulation film and the third insulation film; etching a surface of the wiring; forming a first conductive film on a bottom part and lateral walls of the hole; and forming a second conductive film for filling in the hole on the first conductive film. A thickness of the first conductive film is less than quantity of etching in the step of etching the surface of the first wiring in the bottom center of the hole.