| 摘要 |
A semiconductor device is provided to enhance current efficiency from an anode to a cathode by reducing a current flowing into a substrate side due to a vertical parasitic bipolar transistor. A semiconductor device includes a diode element, a first conductive first well layer, a second conductive second impurity layer, and a second conductive impurity layer. The diode element is formed on a semiconductor substrate. The first conductive first well layer is formed on the semiconductor substrate and is coupled to a cathode electrode of the diode element. The first impurity layer is coupled with an anode electrode of the diode element and is formed in the first conductive well layer. The second conductive second well layer is coupled with a cathode electrode of the diode element and is formed in the well layer to be spaced apart from the first impurity layer. The first impurity layer, the well layer, and the second impurity layer form a lateral bipolar transistor(50).
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