METHOD OF SELECTING MASK FILM FOR IMPLANT AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME

摘要

A method of selecting a mask film for ion implantation and a manufacturing method of a semiconductor device using the same are provided to improve remarkably the yield and quality of the semiconductor device by using an optimum mask for ion implantation. Mask layers having different degrees of thickness are formed on a plurality of substrates. An ion implantation process for the mask layers having different thickness is performed by using a predetermined ion implantation condition. The mask layers are removed from the substrates. A dose of ions implanted into the substrates is analyzed by using an SIMS analysis apparatus(15). The optimum mask layer for ion implantation is selected by analyzing the dose of ions implanted into the substrates. The optimum mask layer for ion implantation is not implanted into the substrates.