| 摘要 |
<p>A single-crystalline silicon carbide nanowire having a high aspect ratio without containing impurities, a method of mass-producing the single-crystalline silicon carbide nanowire, a filter in which single-crystalline silicon carbide is grown, and a manufacturing method of the filter are provided. A preparation method of a single-crystalline silicon carbide nanowire comprises: mixing silica(21) with carbon(22) at a weight ratio of 6:1 to 0.5:1; pressing the mixture to prepare a porous support(20); and crystallizing the porous support in an inert gas atmosphere by a vapor phase reaction at a pressure of 1x10^-2 to 1x10^-3 torr. The silica is lower silica with a purity of 97% or more. The carbon is one selected from the group consisting of carbon black, Ketjen black, acetylene black, Denka black, Doka black, and combinations thereof. The pressing is an uniaxial pressing or cold isostatic pressing. The porous support has a porosity of 30 to 70%, and a pore size of 1 to 10 mum. The inert gas atmosphere is created using argon gas, argon gas containing 10% of hydrogen, or a mixed gas thereof.</p> |
