发明名称 Memory device with built-in test function and method for controlling the same
摘要 A test circuit employs hardware to test a memory cell in a memory block. The address of an error cell detected is stored in a first or second error address register. Access made by a processor to the address of the error cell would be detected by a first or second address comparator. Data is then written to a first or second correction register, which serves as an alternative cell, or data is read from one of the registers.
申请公布号 US7286422(B2) 申请公布日期 2007.10.23
申请号 US20050146339 申请日期 2005.06.06
申请人 ROHM CO., LTD. 发明人 MARUMOTO KYOJI;SAWAMURA YO;MURATA TATSUHIKO;SUENAGA YOSHIAKI
分类号 G11C7/00;G11C11/413;G06F12/16;G11C27/00;G11C29/00;G11C29/04;G11C29/44 主分类号 G11C7/00
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