发明名称 |
Memory device with built-in test function and method for controlling the same |
摘要 |
A test circuit employs hardware to test a memory cell in a memory block. The address of an error cell detected is stored in a first or second error address register. Access made by a processor to the address of the error cell would be detected by a first or second address comparator. Data is then written to a first or second correction register, which serves as an alternative cell, or data is read from one of the registers.
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申请公布号 |
US7286422(B2) |
申请公布日期 |
2007.10.23 |
申请号 |
US20050146339 |
申请日期 |
2005.06.06 |
申请人 |
ROHM CO., LTD. |
发明人 |
MARUMOTO KYOJI;SAWAMURA YO;MURATA TATSUHIKO;SUENAGA YOSHIAKI |
分类号 |
G11C7/00;G11C11/413;G06F12/16;G11C27/00;G11C29/00;G11C29/04;G11C29/44 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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