发明名称 Image sensor and image sensor integrated type active matrix type display device
摘要 To fabricate an active matrix type display device integrated with an image sensor at a low cost and without complicating process, an image sensor laminated with TFT and a light receiving unit is formed on a light receiving matrix, a display matrix is arranged with TFT and pixel electrodes on a matrix and formed with an electrode layer functioning as a black matrix, a lower electrode of the light receiving unit is formed by a starting film the same as that of the black matrix, a terminal for fixing potential of an upper electrode is formed by starting films the same as those of a signal line, the electrode layer or pixel electrodes and the terminals function also as shield electrodes for a side face of the light receiving unit since potential thereof is fixed.
申请公布号 US7286173(B2) 申请公布日期 2007.10.23
申请号 US20060418279 申请日期 2006.05.04
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ZHANG HONGYONG;SAKAKURA MASAYUKI;SATOU YURIKA
分类号 H01L29/786;H04N3/14;H01L21/336;H01L21/77;H01L21/84;H01L27/146 主分类号 H01L29/786
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