METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to form an organic spacer on a sidewall of a patterned photoresist layer by using an organic gas and improve the performance of the semiconductor device by making the thin film more minutely. A thin film(110) is formed on a semiconductor substrate(100). A photoresist layer(130) is formed on the thin film. The photoresist layer is patterned to form a first opening for exposing a first part of the thin film. An organic layer(140) is formed by supplying the patterned photoresist layer and the first part of the thin film. An organic spacer is formed on the first part of the thin film along the side of the first opening by blanket-etching the organic layer. A second part of the exposed thin film is etched by using a second opening formed by the organic spacer. The patterned photoresist layer and the organic spacer are removed therefrom.