| 摘要 |
A semiconductor device with improved electric property and a fabricating method thereof are provided to suppress a hump phenomenon by uniformly doping a dopant by the edge of an active region in a vertical direction. A pad insulating layer is formed on a silicon semiconductor substrate(601), and the pad insulating layer and the substrate are sequentially etched to form a trench(604) in the substrate. A thin film comprising a dopant(606) is formed on an inner wall of the trench, and then the thin layer is anisotropically etched, in which the dopant is diffused to an active region. The trench is buried by STI(Shallow Trench Isolation) oxide, and then the STI oxide is planarized.
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