发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE MANUFACTURING METHOD AND SUBSTRATE TREATING APPARATUS |
摘要 |
A method is provided with a step of supplying a reacting furnace (200) with a plurality of gases which react each other and an inert gas and oxidizing a substrate (20) under an atmospheric pressure, and a step of carrying out the substrate (20) after oxidizing from the reacting furnace. In the oxidizing step, the partial pressure of the oxidizing gas is kept constant by changing a flow quantity of the inert gas in accordance with atmospheric pressure variation, and a flow quantity of the inert gas is calculated based on a previously calculated flow quantity of a gas generated by the reaction of the gases and a gas remained without being consumed by the reaction.
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申请公布号 |
KR20070103064(A) |
申请公布日期 |
2007.10.22 |
申请号 |
KR20077020885 |
申请日期 |
2006.03.30 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
NAKAMURA NAOTO;NAKAMURA IWAO;SASAJIMA RYOTA |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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