| 摘要 |
A method for fabricating a semiconductor device is provided to minimize generation of by-products of a polymer component by selectively etching an insulating layer through an etching process using a process gas. An insulating layer(202) is deposited on a semiconductor substrate(200). After a photoresist is applied on the photoresist pattern, the insulating layer is selectively etched by using a nitrogen gas as a process gas to form a contact hole. A CN-based material generated by reaction by-products of a polymer component formed in the contact hole with the nitrogen gas is removed. The etching process is performed by using a mixture gas of the process gas and one selected from the group consisting of a CF-based gas, an oxygen gas and a carbon monoxide gas.
|
