| 摘要 |
<p>A flash memory is provided to prevent electric charges from being stably moved from a floating gate by forming an SiNO layer between a side wall oxide layer and a stress relieving oxide layers. A stack gate(120) includes a tunnel oxide layer(121) deposited on a substrate, a floating gate(122) formed on the tunnel oxide layer, an insulating layer(123) formed on the floating gate, and a control gate(124) formed on the insulating layer, and is enclosed by a side wall oxide layer(130). A stress relieving oxide layer(150) is formed around the side wall oxide layer. A side wall spacer(160) is formed around the stress relieving oxide layer, and a nitride layet is formed around the side wall oxide layer. An SiNO layer is formed between the side wall oxide layer and the stress relieving oxide layer.</p> |
