NON-VOLATILE MEMORY DEVICE CAPABLE OF REDUCING THRESHOLD VOLTAGE DISTRIBUTION

摘要

A non-volatile memory device capable of reducing threshold voltage distribution is provided to improve the reliability of memory cells sensitive to random telegraph noise by preventing threshold voltage distribution from being enlarged by memory cells sensitive to RTN. Memory cells selected by loaded data bits are programed(S100), and then data bits are read from the selected memory cells(S110). The programing and reading processes are repeated until the read data bits are determined as pass data bit. Program prevention data bits among data bits to be programed in the selected memory cell are reset as program data bits by the corresponding program data bits read in the reading process(S130).