| 摘要 |
A semiconductor device of an SIP(System In Package) structure and a fabricating method thereof are provided to prevent electro migration by forming a contact or metal interconnection by using a diffusion barrier layer of TiSiN uniformly formed on the semiconductor device. After an interlayer dielectric is formed on a substrate, and a contact pattern is formed on the interlayer dielectric. A TiN layer is deposited on the interlayer dielectric by thermally decomposing TDMAT(Tetrakis Dimethyl Amio Titanium) material. The TiN layer is subjected to a plasma process to form a CVD TiN layer, and then the CVD TiN layer is reacted with SiH4 gas at a temperature of 300 to 400 deg.C to form a diffusion barrier layer(20). A metal layer(30) is formed on the diffusion barrier layer to bury the contact pattern. |
