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发明名称
Method for Forming a Gate Dielectric of a Semiconductor Device
摘要
申请公布号
KR100769136(B1)
申请公布日期
2007.10.22
申请号
KR20050080733
申请日期
2005.08.31
申请人
发明人
分类号
H01L21/31
主分类号
H01L21/31
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代理人
主权项
地址
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