| 摘要 |
<p>A memory element and a memory are provided to obtain thermal stability as an information retaining property without increasing an amount of threshold currents. A memory element includes a memory layer(17) and a magnetization fixing layer(31). The memory layer(17) maintains information based on a magnetization state of a magnetic material. The magnetization fixing layer(31) is provided for the memory layer(17) through an intermediate layer(16). The intermediate layer(16) is composed of an insulator. A spin-polarized electron is injected in a stacking direction to change a magnetization direction of the memory layer(17) so that information is recorded in the memory layer(17). A fine oxide is dispersed in an entire or part of a ferromagnetic layer(13,15) forming the memory layer(17). The ferromagnetic layer(13,15) forming the memory layer(17) has a coercive force of 200[Oe] or more.</p> |
