MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method of fabricating a semiconductor device is provided to improve the reliability of the process by filling a ripped-out portion of an interlayer dielectric with insulation material and subjecting the portion to a CMP process. A first interlayer dielectric(22) which is ripped out due to detachment of oxide particles during a first planarizing process is subjected to a HDP(High Density Plasma) CVD to form a second interlayer dielectric(23). Plural metal interconnections(21) and a bottom insulating layer(20) are formed under the first interlayer dielectric. The second interlayer dielectric is subjected to chemical mechanical polishing so that oxide particles generated at deposition of the second interlayer dielectric are fully eliminated.