| 摘要 |
<p>An OPC method is provided to prevent deterioration of precision of a mask pattern and to improve a process margin by reducing a difference between a DI CD and an FI CD. A DI(Development Image) CD(Critical Dimension) and a FI(Final Image) CD are detected according to each pattern. A CD error is calculated based on a design pattern CD for each DI CD and FI CD. An average value of the DI CD and the FI CD is calculated, and then an OPC(Optical Proximity Correction) modeling is performed by using the average value of the CD error. The pattern comprises an isolated pattern region and a dense pattern region.</p> |
