| 摘要 |
1,013,064. Zone-melting. SIEMENS & HALSKE A.G. Dec. 2, 1963 [Dec. 3, 1962], No. 47394/63. Heading BIS. In the production of a monocrystalline rod of germanium or silicon by zone-melting or crystal-pulling, a low lattice dislocation (e.g. 5000/cm.<SP>2</SP>) is produced in the rod by passing a current between the growing rod and the solidifying melt, preferably from the melt to the rod. The current density may be 100 A./cm.<SP>2</SP>. An alternating current may be superimposed on the direct current. The rod may have a diameter of 10À5 mm., the speed of pulling may be 2À5 mm./minute, and the pulled rod may be rotated at 60 r.p.m. As shown, a rod 2 is melted by an induction coil 8 to produce a molten zone 3, and a rod I is solidified from molten zone 3. Passage of a current in direction 7 produces a concave solidifying surface 5 which moves in direction 4. |
