METHOD FOR ENHANCING RADIATION STABILITY OF SEMICONDUCTOR DEVICES

摘要

FIELD: semiconductor device manufacture. ^ SUBSTANCE: upon formation of epitaxial film and silicon dioxide insulating layer on semiconductor substrate surface semiconductor structures are subjected to gamma-quanta treatment at dose rate ranging between 105 and 106 radians and temperature ranging between 350 and 450 °C. Such treatment provides for reducing leakage currents, enhancing mobility of carriers within semiconductor devices, facilitating their manufacture, and improving their parameters. ^ EFFECT: enhanced reliability and yield. ^ 1 cl