METHOD FOR ASSEMBLING PHOTODETECTOR UNIT

摘要

FIELD: assembling infrared photodetector units and silicon read-out large-scale integrated circuits affording reliable connection between components of photodetector matrix and read-out one. ^ SUBSTANCE: proposed method for assembling photodetector unit includes evaporation of indium layer onto semiconductor materials, formation of indium columns by way of photolithography followed by interconnection of matrices of photosensitive components and silicon read-out large-scale integrated circuit; indium layer, 8 - 20 mum thick, used for producing columns is applied by high-vacuum evaporation on matrices of photosensitive components and silicon read-out large-scale integrated circuit being cooled down to (15 - 20) °C at a rate of 0.1 - 1 mum/min. ^ EFFECT: enhanced reliability of electrical connection between matrices of photosensitive components and silicon read-out large-scale integrated circuit. ^ 1 cl