发明名称 DEPOSITION OF LICOO2
摘要 In accordance with the present invention, deposition of LiCoO2 layers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoO2 with a desired or orientation. Some embodiments of the deposition addresses the need for high rate deposition of LiCoO2 films, which can be utilized as the cathode layer in a solid state rechargeable Li battery. Embodiments of the process according to the present invention can eliminate the high temperature (>700°C) anneal step that is conventionally needed to crystallize the LiCoO2 layer. Some embodiments of the process can improve a battery utilizing the LiCoO 2 layer by utilizing a rapid thermal anneal process with short ramp rates.
申请公布号 KR20070102761(A) 申请公布日期 2007.10.19
申请号 KR20077022717 申请日期 2005.12.07
申请人 SYMMORPHIX, INC. 发明人 ZHANG HONGMEI;DEMARAY RICHARD E.;NEUDECKER BERND J.
分类号 C23C14/34;C23C14/08;H01M4/02;H01M4/04;H01M4/131;H01M4/1391;H01M4/52;H01M4/525;H01M10/052;H01M10/0562;H01M10/0585;H01M10/36 主分类号 C23C14/34
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