发明名称 APPARATUS FOR TREATMENT OF THE SUBSTRATE
摘要 A substrate processing apparatus is provided to exhaust a process gas from a process chamber uniformly by extending a first gas exhaust pipe in parallel with an upper surface of the process chamber and to perform a process stably by uniformly distributing gas inside the process chamber. A substrate processing apparatus includes a process chamber(210), in which a substrate is processed, and a gas exhaust part(230) for exhausting the process gas from the process chamber. The gas exhaust part has a first gas exhaust pipe(232) with plural gas inlet ports(234) through which the process gas passes from the process chamber, and a second gas exhaust pipe connected to the first gas exhaust pipe for exhausting the process gas from the first gas exhaust pipe.
申请公布号 KR100768558(B1) 申请公布日期 2007.10.19
申请号 KR20060137921 申请日期 2006.12.29
申请人 SEMES CO., LTD. 发明人 YOO, DONG JIN;LEE, MUN HEE
分类号 H01L21/00;H01L21/02 主分类号 H01L21/00
代理机构 代理人
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