发明名称 HEATING APPARATUS FOR SEMICONDUCTOR WAFERS AND GLASS SUBSTRATES
摘要 A substrate heating apparatus is provided to improve the accuracy of temperature by adjusting separation distance between a heater and a heat radiating unit, thereby increasing the efficiency of operation. A heating unit has a heater(106) heating a substrate(100) and a heater chuck(104) directly transmitting the heat to the substrate. A heat radiating unit(110) radiates the heat towards a lower portion of the heater. The heat transmitted from the heater to the substrate is lowered by a substrate supporting plate(102). A support pin(108) is movable to adjust an interval of the heater chuck and the substrate supporting plate. A Z-axis ball screw(112) adjusts temperatures of the heater and the heat radiating unit by adjusting the interval.
申请公布号 KR100768899(B1) 申请公布日期 2007.10.19
申请号 KR20060044849 申请日期 2006.05.18
申请人 MECS KOREA INC. 发明人 CHUN, POONG HWAN;KIM, SANG WOOK
分类号 H01L21/00;H01L21/02;H01L21/324 主分类号 H01L21/00
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