发明名称 |
HEATING APPARATUS FOR SEMICONDUCTOR WAFERS AND GLASS SUBSTRATES |
摘要 |
A substrate heating apparatus is provided to improve the accuracy of temperature by adjusting separation distance between a heater and a heat radiating unit, thereby increasing the efficiency of operation. A heating unit has a heater(106) heating a substrate(100) and a heater chuck(104) directly transmitting the heat to the substrate. A heat radiating unit(110) radiates the heat towards a lower portion of the heater. The heat transmitted from the heater to the substrate is lowered by a substrate supporting plate(102). A support pin(108) is movable to adjust an interval of the heater chuck and the substrate supporting plate. A Z-axis ball screw(112) adjusts temperatures of the heater and the heat radiating unit by adjusting the interval.
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申请公布号 |
KR100768899(B1) |
申请公布日期 |
2007.10.19 |
申请号 |
KR20060044849 |
申请日期 |
2006.05.18 |
申请人 |
MECS KOREA INC. |
发明人 |
CHUN, POONG HWAN;KIM, SANG WOOK |
分类号 |
H01L21/00;H01L21/02;H01L21/324 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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