发明名称 Zwischenverbindungsstruktur in einer Waferebenenpackung und Herstellungsverfahren
摘要 A structure for improving electrical performance and interconnection reliability of an integrated circuit in a Wafer Level Packaging (WLP) application comprises an air pad located under an interconnection metal solder pad. Using a low dielectric material such as air underlying the interconnection pad, pad capacitance is reduced, thereby improving the speed of associated electrical signal transitions. By configuring the structure to have interconnection pad supports at only a limited number of pad periphery points, a cured soldered connection can absorb mechanical stresses associated with divergent movement between a connecting wire and the interconnection pad. Such a structure can be manufactured using the steps of: 1) depositing a soluble base material in a cavity on an IC substrate, 2) depositing a metal pad layer on the soluble base layer, and 3) dissolving the soluble base layer, leaving an air gap under the metal pad layer which is supported by the periphery supports.
申请公布号 DE10301432(B4) 申请公布日期 2007.10.18
申请号 DE2003101432 申请日期 2003.01.14
申请人 SAMSUNG ELECTRONICS CO. LTD. 发明人 KIM, GU-SUNG
分类号 H01L21/60;H01L23/50;H01L21/44;H01L21/56;H01L23/28;H01L23/485 主分类号 H01L21/60
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