| 摘要 |
A semiconductor device ( 7 ) has a number of bonding leads ( 1, 2, 3 ) with more than one individual bonding lead ( 1 ) being arranged on an individual contact area ( 4 ) of a semiconductor chip ( 5 ) or a wiring component ( 6 ) of the semiconductor device ( 7 ). The bonding leads ( 1, 2 and 3 ) of a stack ( 8 ) form ohmic transitions ( 12, 13 ) in their boundary layers. For this purpose, the stacked contact elements ( 9, 10 ) have different materials with a different material composition. |
