SEMICONDUCTOR DEVICE HAVING FERROELECTRIC ELEMENT

摘要

A semiconductor device having a ferroelectric film, comprising a first conductive layer, an interlayer insulating film superimposed on the first conductive layer and a second conductive layer superimposed on the interlayer insulating film, wherein within the interlayer insulating film, there are disposed multiple block layers capable of inhibiting of hydrogen or moisture migration. There is provided a contact plug fitted to the interlayer insulating film and effecting connection between the first and second conductive layers, which contact plug is furnished with a glue layer including a titanium film and a metal nitride film or metal silicide film and, superimposed on the glue layer, a tungsten plug layer. The glue layer enhances the adhesion with side wall of the interlayer insulating film and also enhances the mechanical strength thereof, so that there can be inhibited release of hydrogen gas from the side wall of the interlayer insulating film and suppressed failure of the contact plug.