发明名称 |
PROCESS FOR PRODUCING RESIN FOR SEMICONDUCTOR LITHOGRAPHY |
摘要 |
<p>This invention provides a process for producing a resin for semiconductor lithography that can suppress the occurrence of defects, particularly bridge mode defects. The process for producing a resin for semiconductor lithography comprises bringing a resin solution (R1) of a resin (A1) for semiconductor lithography, comprising constituent units (a2) containing a lactone-containing cyclic group, dissolved in an organic solvent (S1) into contact with a resin (A1') having a solubility parameter in the range of 17 to 20 (J/cm<SUP>3</SUP>)<SUP>1/2</SUP> and a specific surface area in the range of 0.005 to 1 m<SUP>2</SUP>/g.</p> |
申请公布号 |
WO2007116614(A1) |
申请公布日期 |
2007.10.18 |
申请号 |
WO2007JP53041 |
申请日期 |
2007.02.20 |
申请人 |
TOKYO OHKA KOGYO CO., LTD.;HIRANO, ISAO;IWAI, TAKESHI |
发明人 |
HIRANO, ISAO;IWAI, TAKESHI |
分类号 |
G03F7/039;C08F20/28;C08F6/10 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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