发明名称 PROCESS FOR PRODUCING RESIN FOR SEMICONDUCTOR LITHOGRAPHY
摘要 <p>This invention provides a process for producing a resin for semiconductor lithography that can suppress the occurrence of defects, particularly bridge mode defects. The process for producing a resin for semiconductor lithography comprises bringing a resin solution (R1) of a resin (A1) for semiconductor lithography, comprising constituent units (a2) containing a lactone-containing cyclic group, dissolved in an organic solvent (S1) into contact with a resin (A1') having a solubility parameter in the range of 17 to 20 (J/cm&lt;SUP&gt;3&lt;/SUP&gt;)&lt;SUP&gt;1/2&lt;/SUP&gt; and a specific surface area in the range of 0.005 to 1 m&lt;SUP&gt;2&lt;/SUP&gt;/g.</p>
申请公布号 WO2007116614(A1) 申请公布日期 2007.10.18
申请号 WO2007JP53041 申请日期 2007.02.20
申请人 TOKYO OHKA KOGYO CO., LTD.;HIRANO, ISAO;IWAI, TAKESHI 发明人 HIRANO, ISAO;IWAI, TAKESHI
分类号 G03F7/039;C08F20/28;C08F6/10 主分类号 G03F7/039
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