| 摘要 |
A method for fabricating a semiconductor device is provided to prevent short between neighboring metal lines or upper and lower metal lines by removing the edge parts of the metal lines. A method for fabricating a semiconductor device includes the steps of: forming a first interlayer insulating layer(21) on a semiconductor substrate(20); forming a contact hole on the first interlayer insulating layer; filling a conductive layer for forming a drain contact(22); forming a second interlayer insulating layer(25) on the first interlayer insulating layer including the drain contact; forming a trench exposing the drain contact by selectively etching the second interlayer insulating layer; cleaning the trench; depositing a metal layer on a whole surface including the trench; forming a lower metal line(26) by planarizing the metal line for exposing the second interlayer insulating layer; applying photoresist on the whole surface including the lower metal line; etching an edge of the second interlayer insulating layer and the lower metal line and removing the photoresist; forming a third interlayer insulating layer(27) on the whole surface including the lower metal line; forming the contact hole exposing the lower metal line on the third interlayer insulating layer; and forming an upper metal line(28) by filling the conductive layer in the contact hole.
|
