| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be sufficiently suppressed with a current collapse phenomenon. SOLUTION: The Schottky diode 1 comprises a substrate 2, buffer layer 3 formed on the substrate 2, electron running layer 4 and electrode supply layer 5 which consist of a nitride-based compound semiconductor, anode electrode 6, and cathode electrode 7. The substrate 2 and the cathode electrode 7 are electrically connected via a connection conductor 8. In the connection conductor 8, an external diode 9 is inserted which is connected in such a manner that the anode side may be on the cathode electrode 7 side. COPYRIGHT: (C)2008,JPO&INPIT |
